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US 12,563,844 B2Granted
Backside emitter solar cell structure having a heterojunction
AssigneeMeyer Burger (Germany) GmbH
InventorsJun Zhao, Marcel Koenig
Life of this patent
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Abstract
A backside emitter solar cell structure having a heterojunction. On one side edge of the backside emitter solar cell structure having the heterojunction, on an edge region of a crystalline semiconductor substrate of the backside emitter solar cell structure having the heterojunction having a doping of a first conductivity type, there is a layer sequence with a double intrinsic layer formed.
Claims5
A backside emitter solar cell structure having a heterojunction, comprising:
- a crystalline semiconductor substrate having a side edge and having a doping of a first conductivity type;
- and
- a layer sequence with a double intrinsic layer formed on said side edge of said crystalline semiconductor substrate;
- wherein:
- said crystalline semiconductor substrate is n-doped, said layer sequence with said double intrinsic layer includes a i−i−n+-p layer sequence, and said double intrinsic layer is the i-i in said i−i−n+-p layer sequence;
- or
- said crystalline semiconductor substrate is p-doped, said layer sequence with said double intrinsic layer includes a i−i−p+-n layer sequence, and said double intrinsic layer is the i-i in said i−i−p+-n layer sequence.
4 more elements
Dependencies are inferred from the claim text.