Concurrent or cyclical etch and directional deposition

A method of performing an etching process using an etching and deposition system including a process chamber, an reactive-ion etching (RIE) source adapted to produce an ion beam and to direct the ion beam into the process chamber, a first plasma enhanced chemical vapor deposition (PECVD) source located on a first side of the RIE source, the first PECVD source adapted to produce a first radical beam and to direct the first radical beam into the process chamber, and a second PECVD source located on a second side of the RIE source opposite the first side, the second PECVD source adapted to produce a second radical beam and to direct the second radical beam into the process chamber, the method comprising:

• disposing a substrate on a platen within the process chamber, the substrate having a top surface defining a substrate plane;
• disposing a hard mask on the top surface of the substrate, the hard mask having openings defining a pattern to be transferred to the substrate;
• performing an etching process wherein the RIE source is activated and the ion beam is directed onto the hard mask to etch the pattern into the substrate;
• performing a first deposition process wherein the first PECVD source is activated and the first radical beam is directed at a first side of the hard mask to deposit a first material on the first side of the hard mask;
• and
• performing a second deposition process wherein the second PECVD source is activated and the second radical beam is directed at a second side of the hard mask opposite the first side to deposit a second material on the second side of the hard mask.

A method of performing an etching process using an etching and deposition system including a process chamber, an reactive-ion etching (RIE) source adapted to produce an ion beam and to direct the ion beam into the process chamber, and a plasma enhanced chemical vapor deposition (PECVD) source located adjacent the RIE source, the PECVD source adapted to produce a radical beam and to direct the radical beam into the process chamber, the method comprising:

• disposing a substrate on a platen, the substrate having a top surface defining a substrate plane;
• disposing a hard mask on the top surface of the substrate, the hard mask having openings defining a pattern to be transferred to the substrate;
• performing an etching process wherein the RIE source is activated and the ion beam is directed onto the hard mask to etch the pattern into the substrate;
• performing a first deposition process wherein the PECVD source is activated and the radical beam is directed at a first side of the hard mask to deposit a material on the first side of the hard mask;
• rotating the platen;
• and
• performing a second deposition process wherein the PECVD source is activated and the radical beam is directed at a second side of the hard mask opposite the first side to deposit the material on the second side of the hard mask.