Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate having a main surface;
• a wiring layer formed on the main surface of the semiconductor substrate;
• a dielectric layer provided so as to cover the wiring layer, the dielectric layer having an upper surface and a via hole exposing a part of the wiring layer;
• a plug electrode provided in the via hole;
• and
• a thin film resistor provided on the plug electrode and the dielectric layer and electrically connected to the wiring layer via the plug electrode,
• wherein the via hole includes:
• a first incline surface of which a periphery is in contact with the dielectric layer;
• and
• a second incline surface connected to the first incline surface,
• wherein the first incline surface has a first incline angle to the main surface,
• wherein the second incline surface has a second incline angle to the main surface,
• wherein the second incline angle is smaller than the first incline angle,
• wherein the plug electrode includes:
• a barrier layer extending on the first incline surface and the second incline surface;
• and
• a buried layer provided on the barrier layer,
• wherein the buried layer includes:
• a filling portion formed on the barrier layer and filling a region surrounded by the first incline surface;
• and
• an extension portion extending on the barrier layer from the filling portion along the second incline surface, and
• wherein the thin film resistor is in contact with the filling portion and the extension portion.