Chip resistor and method for producing same

A chip resistor comprising:

• an insulating substrate;
• a resistance element including Cr, Si, N, and Al and disposed on the insulating substrate;
• an electrode including at least one refractory metal and disposed on the resistance element, the at least one refractory metal being a metal having a melting point of 800° C. or higher;
• and
• a surface oxynitride layer made of an oxynitride film including Si, Cr and Al, wherein:
• an atomic ratio of Si to Cr in the resistance element is greater than or equal to ⅔ and less than or equal to 4 at least at a center of the resistance element in a thickness direction defined with respect to the resistance element,
• an atomic percentage of N in the resistance element is lower than or equal to 50 atom % at least at the center of the resistance element in the thickness direction,
• an atomic percentage of Al in the resistance element is lower than or equal to 30 atom % at least at the center of the resistance element in the thickness direction, and
• an atomic percentage of Si is greater than a sum of an atomic percentage of Cr and an atomic percentage of Al in the surface oxynitride layer.