Process for producing nanoclusters of silicon and/or germanium exhibiting a permanent magnetic and/or electric dipole moment

A process for producing and depositing nanoclusters of silicon and/or germanium exhibiting a permanent magnetic and/or electric dipole moment by means of a capacitive- or inductive-coupling plasma reactor by implementing a pulsed plasma-enhanced chemical vapour deposition (PECVD), microwave plasma chemical vapour deposition, cathodic or magnetron sputtering;

• the process being carried out with the following parameters:
• a pressure comprised between 0.05 mbar and 5 mbar;
• a radiofrequency discharge at 13.56 MHz or their harmonics, or microwave discharge at 2.45 GHz or their harmonics for creation of a plasma;
• a driving power comprised between 0.1 mW/cm3 and 5 mW/cm3;
• a gas temperature between 50° C. and 150° C.;
• a time period between the start of generation and the end of generation of a plasma in the reactor comprised between 0.1 second and 10 seconds;
• and
• the nanoclusters are deposited and oriented under the effect of a DC electrical voltage comprised between 0 V and 1,000 V.