Three-phase motor driver with built-in discrete MOSFETs

A device comprising:

• a controller;
• a motor;
• a hybrid integrated circuit (IC) comprising:
• a driver IC connected to the controller through input pins of the hybrid IC;
• a first IC arranged along one side of the driver IC in plan view and including:
• a plurality of high-side metal-oxide-semiconductor field-effect transistors (MOSFETs);
• a common drain terminal connected to drains of the plurality of high-side MOSFETs;
• a plurality of second ICs, wherein each second IC includes a respective low-side MOSFET;
• a first set of bonding wires connecting the driver IC to the first IC;
• a second set of bonding wires connecting the driver IC to the plurality of second ICs, wherein:
• each one of the plurality of high-side MOSFETs and low-side MOSFETs among the plurality of second ICs include a gate pad located at a corner;
• and
• an outer high-side MOSFET among the plurality of high-side MOSFETs is arranged such that a position of the gate pad of the outer high-side MOSFET is in proximity to the driver IC chip.

A hybrid integrated circuit (IC) comprising:

• a driver IC;
• a plurality of high-side metal-oxide-semiconductor field-effect transistors (MOSFETs) integrated in a first IC separated from the driver IC, the first IC being arranged along one side of the driver IC in plan view, wherein:
• drains of the plurality of high-side MOSFETs are connected at a common drain terminal of the first IC;
• each one of the high-side MOSFETs include a gate pad located at a corner of a corresponding high-side MOSFET;
• a plurality of low-side MOSFETs, wherein:
• each one of the low-side MOSFETs is integrated in an individual second IC separated from the driver IC and the first IC;
• each one of the low-side MOSFETs include a gate pad located at a corner of a corresponding low-side MOSFET;
• a first set of bonding wires connecting the driver IC to the gate pads of the plurality of high-side MOSFETS;
• a second set of bonding wires connecting the driver IC to the gate pads of the plurality of low-side MOSFETs, wherein:
• each one of the plurality of high-side MOSFETs and low-side MOSFETs among the plurality of second ICs include a gate pad located at a corner;
• and
• an outer high-side MOSFET among the plurality of high-side MOSFETs is arranged such that a position of the gate pad of the outer high-side MOSFET is in proximity to the driver IC chip.