Loading patent…
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKei Takahashi, Takayuki Ikeda, Shuji Fukai, Shunpei Yamazaki
Estimating the term…
A small semiconductor device is provided. A semiconductor device with low power consumption is provided. A semiconductor device with a high degree of integration is provided. The semiconductor device includes a first transistor, an insulating layer over the first transistor, a conductive layer, and a gate driver; part of the conductive layer is provided to be embedded in the insulating layer; the gate driver includes a second transistor and a third transistor; the second transistor and the third transistor are stacked and provided over the first transistor; the second transistor and the third transistor each contain a metal oxide in a channel formation region; one of a source and a drain of the second transistor and one of a source and a drain of the third transistor are electrically connected to a gate of the first transistor through the conductive layer; the gate driver is supplied with a first potential and a second potential; and the gate driver has a function of selecting the first potential or the second potential and supplying the selected potential to the gate of the first transistor.
A semiconductor device comprising a first transistor, a second transistor, a gate driver, a first comparator circuit, a second comparator circuit, and a first terminal,
An amplifier comprising a first transistor, a second transistor, a gate driver, a power supply control circuit, an inductor, a capacitor, a first terminal, a second terminal, and a third terminal,
A semiconductor device comprising a first transistor, an insulating layer over the first transistor, a conductive layer, and a gate driver,
Dependencies are inferred from the claim text.