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US 12,512,834 B2Granted
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsYo Habu, Akihisa Yamamoto
Life of this patent
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Abstract
A semiconductor device includes: a P-side driving circuit and an N-side driving circuit respectively driving a P-side switching device and an N-side switching device which are connected to configure a half bridge; and a N-side power supply generation circuit generating a power supply voltage for the N-side driving circuit from a power supply voltage for the P-side switching device.
Claims2
A semiconductor device comprising:
- a P-side driving circuit and an N-side driving circuit respectively driving a P-side switching device and an N-side switching device which are connected to configure a half bridge;
- an N-side power supply generation circuit generating a power supply voltage for the N-side driving circuit from a power supply voltage for the P-side switching device;
- a transformer generating a voltage higher than the power supply voltage for the P-side switching device;
- and
- a P-side power supply generation circuit generating a power supply voltage for the P-side driving circuit from the voltage generated by the transformer.
2 more elements
Dependencies are inferred from the claim text.