Driving device and semiconductor device

A semiconductor device, comprising:

• a driving device;
• a semiconductor element;
• and
• a case for storing the driving device and the semiconductor element inside,
• the driving device, comprising:
• a controller determining and setting either a first mode set when a direction of a current flowing into a semiconductor element including a reverse conducting IGBT including a first gate electrode and a second gate electrode is a forward direction or a second mode set when the direction of the current flowing into the semiconductor element is a backward direction;
• and
• a driver generating a first driving signal to output the first driving signal to the first gate electrode, and generating a second driving signal to output the second driving signal to the second gate electrode, in accordance with the setting of the controller,
• the controller controlling the driver, on the basis of a control signal including an ON command for turning on the semiconductor element and an OFF command for turning off the semiconductor element,
• the driver,
• in the first mode,
• transitioning the first driving signal to an ON voltage at which the semiconductor element is turned on, at a timing of the ON command, and transitioning the first driving signal to an OFF voltage at which the semiconductor element is turned off, at a timing of the OFF command, and
• transitioning the second driving signal to the ON voltage, at the timing of the ON command, and transitioning the second signal to the OFF voltage, before a predetermined first time when the first driving signal is transitioned to the OFF voltage, and
• in the second mode,
• transitioning the first driving signal to the ON voltage, after a predetermined second time when it is detected that the current flowing into the semiconductor element is the backward direction, and continuously transitioning the first driving signal to the OFF voltage for a predetermined third time, and
• maintaining the second driving signal at the OFF voltage;
• the first gate electrode being electrically connected to a first output of the driving device, and the second gate electrode being electrically connected to a second output of the driving device,
• wherein the semiconductor element
• includes a cell region, and a non-cell region provided adjacent to the cell region, and
• includes a first electrode,
• a second electrode, and
• a semiconductor portion provided between the first electrode and the second electrode,
• the semiconductor portion of the cell region includes
• a first semiconductor region of a first conductivity type,
• a second semiconductor region of a second conductivity type provided between the first electrode and the first semiconductor region,
• a third semiconductor region of the first conductivity type selectively provided between the first electrode and the second semiconductor region, and electrically connected to the first electrode,
• a fourth semiconductor region of the second conductivity type selectively provided between the first semiconductor region and the second electrode, and connected to the second electrode,
• a fifth semiconductor region of the first conductivity type selectively provided between the first semiconductor region and the second electrode, and connected to the second electrode,
• a first control electrode selectively provided between the first electrode and the first semiconductor region, and electrically separated from the first electrode and the semiconductor portion, and
• a second control electrode selectively provided between the first electrode and the first semiconductor region, and electrically separated from the first electrode, the semiconductor portion, and the first control electrode, and
• the non-cell region includes
• the first semiconductor region,
• the second semiconductor region, and
• the fifth semiconductor region of the first conductivity type provided between the first layer and the second electrode, and electrically connected to the second electrode.