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US 12,484,238 B2Granted
Semiconductor apparatus
AssigneeMitsubishi Electric Corporation
InventorsYuji Ebiike, Shigeto Honda
Life of this patent
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Abstract
According to the present disclosure, a semiconductor apparatus comprises a first gate electrode; a second gate electrode connected in parallel with the first gate electrode; a control circuit connected to the first gate electrode and the second gate electrode and configured to control gate voltages; and a coil connected between the second gate electrode and the control circuit.
Claims19
A semiconductor apparatus comprising:
- a first gate electrode;
- a second gate electrode connected in parallel with the first gate electrode;
- a control circuit connected to the first gate electrode and the second gate electrode and configured to control gate voltages;
- and
- a coil connected between the second gate electrode and the control circuit, without any coil positioned in a conductive path between the first gate electrode and the control circuit.
2 more elements
A semiconductor apparatus comprising:
- a first gate electrode;
- a second gate electrode connected in parallel with the first gate electrode;
- a control circuit connected to the first gate electrode and the second gate electrode and configured to control gate voltages;
- a coil connected between the second gate electrode and the control circuit;
- and
- a first diode connected in parallel with the coil and including a cathode on a side of the second gate electrode and an anode on a side of the control circuit.
3 more elements
A semiconductor apparatus comprising:
- a first gate electrode;
- a second gate electrode connected in parallel with the first gate electrode;
- a control circuit connected to the first gate electrode and the second gate electrode and configured to control gate voltages;
- and
- a coil connected between the second gate electrode and the control circuit,
- wherein a semiconductor device region to be controlled by the first gate electrode has characteristics of a relatively low conduction loss and a relatively high switching loss, and
- a semiconductor device region to be controlled by the second gate electrode has characteristics of a relatively high conduction loss and a relatively low switching loss.
4 more elements
Dependencies are inferred from the claim text.