Systems and methods for measuring on-die DI/DT voltage droops
AssigneeGoogle Inc.
InventorsBenjamin James Ogden Kerr, Erik Jens Loscalzo, Kok-Hong Chan
Life of this patent
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Abstract
The technology is directed to a di/dt circuit for detecting and measuring the di/dt droops on silicon. The circuit may be calibrated to account for silicon process spread. When a di/dt droop has been detected by the circuit, the magnitude of the droop can be measured by the circuit, allowing the system to determine the best course of action. For instance, when the measured droop is within predetermined limits, the system can continue to operate. However, in the event the measured droop is outside of the limits, the system can take different measures to reduce the clock frequency and therefore reduce the step change in power to prevent SDCs.
Claims15
A droop detection circuit, the droop detection circuit comprising:
- a set of parallel tri-state inverters;
- a set of synchronizers;
- a set of XNORs;
- and
- a set of edge registers,
- wherein each parallel tri-state inverter of the set of parallel tri-state inverters is connected to a respective synchronizer of the set of synchronizers, pairs of adjacent synchronizers of the set of synchronizers are connected to a XNOR in the set of XNORs, and each XNOR is connected to a respective edge register in the set of edge registers.
Dependencies are inferred from the claim text.