Thin-film components for integrated circuits

A method for fabricating a thin-film electronic component, the thin-film electronic component including a first terminal, a second terminal, and a first current path between the first terminal and the second terminal, wherein the first current path is formed from a first segment of a layer of a first material and a first segment of a layer of a second material arranged in series between the first terminal and the second terminal, and the method comprising:

• depositing the layer of the first material;
• patterning the layer of first material to form the first segment of the first material;
• depositing the layer of the second material;
• patterning the layer of the second material to form the first segment of the second material;
• depositing a layer of conductive material;
• and
• patterning the layer of conductive material to form the first and second terminals between which the first segments of the layers of the first and second materials form the first current path,
• wherein the layer of the first material has a thickness and the layer of the second material has a thickness, and
• wherein the thin-film electronic component is a thin-film transistor, TFT, and the first terminal is a source terminal of the TFT and the second terminal is a drain terminal of the TFT, and the first segments of the layers of the first and second materials form the channel of the TFT, and wherein the first material is a resistive material and the second material is a semiconducting material.

A method for fabricating a thin-film electronic component, the thin-film electronic component including a first terminal, a second terminal, and a first current path between the first terminal and the second terminal, wherein the first current path is formed from a first segment of a layer of a first material and a first segment of a layer of a second material arranged in series between the first terminal and the second terminal, and the method comprising:

• depositing the layer of the first material;
• patterning the layer of first material to form the first segment of the first material;
• depositing the layer of the second material:
• patterning the layer of the second material to form the first segment of the second material;
• depositing a layer of conductive material;
• and
• patterning the layer of conductive material to form the first and second terminals between which the first segments of the layers of the first and second materials form the first current path, wherein the layer of the first material has a thickness and the layer of the second material has a thickness,
• wherein the thin-film electronic component is a resistor and the first material has a resistivity at least an order of magnitude higher than the resistivity of the second material,
• wherein the thin-film electronic component includes a second current path between the first terminal and the second terminal that is in parallel to the first current path, the second current path being formed from a second segment of the layer of the first material and a second segment of the layer of the second material arranged in series between the first terminal and the second terminal, and wherein
• the patterning of the layer of the first material forms the second segment of the layer of the first material;
• and
• the patterning of the layer of the second material forms the second segment of the layer of the second material.