Method of forming a multipole device, method of influencing an electron beam, and multipole device

A method of forming a multipole device for influencing an electron beam, the method carried out in an electron beam apparatus that comprises an aperture body having at least one aperture opening, the method comprising:

• determining a beam aberration of the electron beam in the electron beam apparatus, and
• directing the electron beam onto two or more surface portions of the aperture body on two or more sides of the at least one aperture opening to generate an electron beam-induced deposition pattern configured to act as a multipole in a charged state,
• wherein the electron beam-induced deposition pattern is generated in a geometry for at least partially compensating or reducing said beam aberration when the electron beam at least partially propagates through the at least one aperture opening.

A method of forming a multipole device for influencing an electron beam, the method carried out in an electron beam apparatus that comprises an aperture body having at least one aperture opening, the method comprising:

• directing the electron beam onto two or more surface portions of the aperture body on two or more sides of the at least one aperture opening to generate an electron beam-induced deposition pattern configured to act as a multipole in a charged state,
• wherein the at least one aperture opening is configured to act as a beam-limiting opening for the electron beam and has a diameter of 100 μm or less.

A method of forming a multipole device for influencing an electron beam, the method carried out in an electron beam apparatus that comprises an aperture body having at least one aperture opening, the method comprising:

• directing the electron beam onto two or more surface portions of the aperture body on two or more sides of the at least one aperture opening to generate an electron beam-induced deposition pattern configured to act as a multipole in a charged state, the method further comprising influencing the electron beam with the multipole device by:
• directing the electron beam onto the at least one aperture opening such that an outer portion of the electron beam is blocked by the aperture body and charges up the deposition pattern, and an inner portion of the electron beam propagates through the at least one aperture opening and is influenced by the deposition pattern acting as the multipole in the charged state.