Semiconductor device including IGBT and MOSFET
AssigneeMitsubishi Electric Corporation
InventorsTaketo Nishiyama, Hiroki Hidaka
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Abstract
A technique disclosed in the specification of the present application is a technique for increasing a degree of freedom of an IGBT in a device, and as a result, achieving downsizing of the device. A semiconductor device relating to a technique disclosed in the specification of the present application includes a plurality of IGBTs connected in series on a power source line in which bus current flows and a MOSFET connected to the plurality of IGBTs in series. The bus current flows via a drain terminal and a source terminal of the MOSFET.
Claims6
A semiconductor device, comprising:
- a plurality of IGBTs connected in series on a power source line in which bus current is configured to flow;
- a MOSFET connected to the plurality of IGBTs in series;
- a current sensor that is configured to detect a sense current and provided in a semiconductor chip constituting the MOSFET;
- and
- a real time control circuit configured to receive an output of the current sensor and control a gate voltage of one of the IGBTs based on the sense current detected in the current sensor by reducing the gate voltage to a voltage between a maximum and a minimum of the gate voltage when a collector current of the IGBTs exceeds a threshold, wherein
- the bus current is configured to flow via a drain terminal and a source terminal of the MOSFET.
A semiconductor device, comprising:
- a plurality of IGBTs connected in series on a power source line in which bus current is configured to flow;
- a MOSFET connected to the plurality of IGBTs in series;
- a temperature sensor provided in a semiconductor chip constituting the MOSFET;
- and
- a real time control circuit configured to receive an output of the temperature sensor and control a gate voltage of one of the IGBTs based on a temperature signal configured to be output from the temperature sensor without a current configured to be detected in a current sensor by reducing the gate voltage to a voltage between a maximum and a minimum of the gate voltage when a collector current of the IGBTs exceeds a threshold, wherein
- the bus current is configured to flow via a drain terminal and a source terminal of the MOSFET.
Dependencies are inferred from the claim text.