Electronic control of protection parameters for a semiconductor switch

A method comprising:

• controlling a semiconductor switch of an electronic device during a switching cycle by a gate driver connected to the semiconductor switch via a protection circuit;
• monitoring a voltage across the semiconductor switch during the switch cycle, and comparing the voltage across the semiconductor switch to a protection parameter, the protection parameter including a voltage threshold representing a selected value of a voltage across the semiconductor switch;
• based on an overcurrent condition causing the voltage of the semiconductor switch to exceed the voltage threshold, deactivating the semiconductor switch, wherein the protection parameter is selected based on a mathematical model of the semiconductor switch, the mathematical model representing a physical property of at least one of the electronic device and the semiconductor switch, wherein the mathematical model is a physics-based semiconductor model, the semiconductor model prescribing a value of the protection parameter based on a temperature of the semiconductor switch, a phase of current applied to the semiconductor switch for controlling the semiconductor switch, and a ripple current.