Method of manufacturing a MEMS device
AssigneeCytosurge AG
InventorEdin Sarajlic
Life of this patent
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Abstract
A method of manufacturing a MEMS device comprising a main body and a protrusion. To provide a generic method of manufacturing a protrusion with reduced vulnerability, the method includes creating a recess in a wafer substrate, said recess having an upper recess section and a lower recess section. The upper recess section is created using anisotropic etching and the lower recess section is formed using corner lithography followed by directional etching. Finally, a filler material is introduced in the recess and at least part of the wafer substrate material is removed so as to expose the filler material introduced in the recess. Additionally, the method allows for the batch-wise production of protrusions having oblique ends.
Claims8
A method of manufacturing a MEMS device, said device comprising
- a main body, and
- a protrusion protruding from the main body;
- wherein the method comprises performing a series of steps on a monocrystalline wafer substrate, wherein the wafer substrate comprises a first main side and a second main side opposite of the first main side;
- wherein the steps comprise
- creating a first recess in the wafer substrate at the first main side, said first recess comprising an upper recess section and a lower recess section, creating said first recess comprising
- creating the upper recess section in the wafer substrate using anisotropic etching,
- performing corner lithography, involving the steps of
- providing a mask at the nadir of the upper recess section,
- growing a cover layer inside the upper recess section and outside the mask,
- removing the mask at the nadir, and
- performing directional etching using the cover layer as a mask so as to form the lower recess section;
- introducing filler material in the first recess,
- forming a second recess in the wafer substrate adjacent to the first recess and at a side chosen from the first main side and the second main side, wherein creating said second recess comprises the following steps
- performing anisotropic etching so as to form a cavity with a wall of said cavity intersecting the lower recess section of the first recess provided with filler material;
- and
- using the plane of the wall to define a barrier and etching the filler material using said barrier, and
- removing at least part of the wafer substrate material so as to expose the filler material introduced in the first recess.
Dependencies are inferred from the claim text.