Simulation model and simulation method
AssigneeMitsubishi Electric Corporation
InventorToshiya Tadakuma
Life of this patent
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Abstract
An object of the present disclosure is to accurately simulate the operation of a CSTBT. The simulation model of a CSTBT includes a MOSFET, a diode whose cathode is connected to the drain of the MOSFET, capacitance CGE connected between a source and a gate of the MOSFET, capacitance CCG connected between a gate of the MOSFET and an anode of the diode, capacitance CCE connected between a source of the MOSFET and the anode of the diode, capacitance CDG connected between the drain and the gate of the MOSFET, and a behavioral power source VDG connected in series to the capacitance CDG between the drain and the gate of the MOSFET. The behavioral power source VDG performs a switching operation when gate-emitter voltage VGE of the CSTBT reaches a predetermined threshold value.
Claims10
A simulation model for simulation evaluating characteristics of a CSTBT being a trench gate type IGBT having a carrier storage layer, the simulation model comprising:
- a MOSFET:
- a diode whose cathode is connected to a drain of the MOSFET;
- capacitance CGE connected between a source and a gate of the MOSFET and representing gate-emitter capacitance of the CSTBT;
- capacitance CCG connected between a gate of the MOSFET and an anode of the diode and representing gate-collector capacitance of the CSTBT;
- capacitance CCE connected between a source of the MOSFET and the anode of the diode and representing collector-emitter capacitance of the CSTBT;
- capacitance CDG connected between the drain and the gate of the MOSFET and representing drain-gate capacitance of the CSTBT;
- and
- a behavioral power source VDG connected in series to the capacitance CDG between the drain and the gate of the MOSFET and representing drain-gate voltage of the CSTBT, wherein
- the behavioral power source VDG performs a switching operation when a voltage is applied to the gate of the MOSFET and gate-emitter voltage VGE of the CSTBT reaches a predetermined threshold value.
A simulation method for evaluating characteristics of a CSTBT being a trench gate type IGBT having a carrier storage layer, wherein the simulation method evaluates characteristics of the CSTBT using a simulation model, the simulation model including:
- a MOSFET, a diode whose cathode is connected to a drain of the MOSFET, capacitance CGE connected between a source and a gate of the MOSFET and representing gate-emitter capacitance of the CSTBT, capacitance CCG connected between a gate of the MOSFET and an anode of the diode and representing gate-collector capacitance of the CSTBT, capacitance CCE connected between a source of the MOSFET and the anode of the diode and representing collector-emitter capacitance of the CSTBT, capacitance CDG connected between the drain and the gate of the MOSFET and representing drain-gate capacitance of the CSTBT, and a behavioral power source VDG connected in series to the capacitance CDG between the drain and the gate of the MOSFET and representing drain-gate voltage of the CSTBT, and
- the method comprising:
- applying a voltage to the gate of the MOSFET;
- and
- operating the behavioral power source VDG to perform a switching operation when gate-emitter voltage VGE of the CSTBT reaches a predetermined threshold value.
Dependencies are inferred from the claim text.