Memory device provided with dram memory circuits arranged in such a way as to minimize the size of a memory block allowing management of the row-hammering
AssigneeUpmem
InventorFabrice Devaux
Life of this patent
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AssigneeUpmem
InventorFabrice Devaux
Estimating the term…
The invention relates to a memory device comprising: —DRAM memory circuits (100), the total capacity of which is divided into a first part (102) and a second part (103) larger than the first part (102); —a control circuit configured to access the memory circuits, the control circuit comprising: —a first block (201) configured to execute a first algorithm (201A) intended to protect the first part (102) from a row-hammering effect; —a second block (202) configured to execute a second algorithm (202A) intended to protect the second part (103) from a row-hammering effect that may occur, the second algorithm (202A) using a main table stored in the first part (102).
A memory device (10) comprising:
A DRAM memory controller (1000), the controller being intended to configure a protection of DRAM memories against a memory row-hammering effect, the protection involving the implementation of a control circuit (1200) and a protection memory block (1101) having a predetermined capacity, the controller being adapted to:
Dependencies are inferred from the claim text.