SiC crystal growth apparatus and method

A SiC crystal growth method, comprising:

• disposing a source comprising carbon and silicon in a lower region of a reaction cell, and disposing a seed in an upper region of the reaction cell;
• evacuating the reaction cell, and filling the reaction cell with inert gas;
• heating the reaction cell;
• again evacuating the reaction cell, and moving gas comprising carbon and silicon atoms from the source towards the seed;
• and
• filtering out carbon or silicon particles from in the gas through a filter, wherein, in filtering out the carbon or silicon particles:
• the filter comprises first, second, and third graphite plates overlapped in a direction from the source to the seed, provided with first, second, and third through holes respectively formed therethrough, and having a thickness of 1 nanometer to 10 centimeters is used;
• and
• centers of the first through holes, the second through holes, and the third through holes form a face-centered cubic structure.

A SiC crystal growth apparatus, comprising:

• a reaction cell provided in a vacuum furnace such that SiC crystals are grown in the reaction cell, wherein the reaction cell is configured such that:
• a source comprising carbon and silicon is disposed in a lower region of an area defined by a crucible and a cover, and a seed is provided below the cover;
• and
• a filter configured to filter out particles from gas supplied from the source is provided between the seed and the source, the filter comprising first, second, and third graphite plates overlapped in a direction from the source to the seed, wherein the filter has a plurality of passages configured to move the gas in a direction not parallel to a longitudinal direction.