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US 12,376,317 B2Granted
Semiconductor device structure with magnetic element
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Cheng Chen, Wei-Li Huang, Chien-Chih Kuo, Hon-Lin Huang, Chin-Yu Ku, Chen-Shien Chen
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element partially covering the magnetic element. The semiconductor device structure further includes a conductive feature over the isolation element.
Claims20
A semiconductor device structure, comprising:
- a substrate;
- a magnetic element over the substrate;
- an isolation element partially covering the magnetic element, wherein the isolation element and the magnetic element have different widths;
- and
- a conductive feature over the isolation element.
2 more elements
A semiconductor device structure, comprising:
- a substrate;
- a magnetic element over the substrate;
- an isolation element extending across an edge of the magnetic element, wherein the magnetic element extends across opposite edges of the isolation element;
- and
- a conductive feature over the isolation element.
2 more elements
A semiconductor device structure, comprising:
- a substrate;
- a magnetic element over the substrate;
- a first isolation element covering a first portion of the magnetic element;
- a second isolation element covering a second portion of the magnetic element, wherein the first isolation element is spaced apart from the second isolation element;
- a first conductive feature over the first isolation element;
- and
- a second conductive feature over the second isolation element.
4 more elements
Dependencies are inferred from the claim text.