Bonding film, tape for wafer processing, method for producing bonded body, and bonded body and pasted body
AssigneeFurukawa Electric Co., Ltd.
InventorsNorzafriza Nitta, Hidemichi Fujiwara, Yoshihiro Sato
Life of this patent
Estimating the term…
Abstract
A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.
Claims20
A bonding film for bonding a semiconductor element and a substrate,
- the bonding film comprising:
- an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form;
- and
- a tack layer having tackiness and laminated on the electroconductive bonding layer,
- wherein the tack layer includes 0.1% to 1.0% by weight of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and
- the metal fine particles (M) have a melting point of 250° C. or lower.
A method for producing a bonded body, the method comprising a bonding step of disposing a bonding film between a semiconductor element and a substrate, the bonding film having an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form;
- and a tack layer having tackiness, including metal fine particles (M), and being laminated on the electroconductive bonding layer, subsequently heating the assembly, and after the tack layer is thermally decomposed and the metal fine particles (M) melt and then react with the electrode of the semiconductor element, sintering the metal fine particles (P) of the electroconductive bonding layer to bond the semiconductor element and the substrate.
A pasted body comprising:
- a tacky adhesive film having a base material film and a tacky adhesive layer provided on the base material film;
- a bonding film for bonding a semiconductor element and a substrate;
- and
- a semiconductor wafer pasted together,
- wherein the bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form;
- and a tack layer having tackiness and laminated on the electroconductive bonding layer,
- the electroconductive bonding layer is pasted to the tacky adhesive layer, the semiconductor wafer is pasted to the tack layer,
- the tack layer is thermally decomposable and includes 0.1% to 1.0% by weight of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and
- after the tack layer is thermally decomposed by heating at the time of bonding and the metal fine particles (M) melt and react with an electrode of the semiconductor element, the metal fine particles (P) of the electroconductive bonding layer are sintered to bond the semiconductor element and the substrate.
Dependencies are inferred from the claim text.