Contamination detection method

A method of forming an integrated circuit, the method comprising:

• forming a first doped region of a detection structure on a substrate, the first doped region comprises a first doping conductivity type;
• forming a first capacitor of the detection structure, comprising:
• forming a second doped region of a second doping conductivity type opposite the first doping conductivity type, the second doped region laterally surrounded by the first doped region, wherein the second doped region comprises a top surface area smaller than a top surface area of the first doped region;
• forming a dielectric layer on the second doped region;
• and
• forming an electrode disposed on the dielectric layer;
• performing parametric testing on the first capacitor over a plurality of breakdown voltages;
• and
• determining gate oxide integrity of the first capacitor as a result of performing the parametric testing over the plurality of breakdown voltages.