Resistor material, resistor element and method of manufacturing the resistor element

A method of manufacturing a resistor element, comprising:

• forming a film of an amorphous material having a negative temperature coefficient of resistance so as to form part of a circuit;
• and
• subjecting the formed film of the amorphous material to an annealing treatment, and crystallizing part of the amorphous material, thereby forming a resistor film having a plurality of crystalline phases having a positive temperature coefficient of resistance and an amorphous phase having a resistivity higher than the crystalline phase,
• wherein the amorphous material consists of Cr—Si—C as constituent elements,
• wherein a temperature of the annealing treatment is 500° C. to 540° C., and
• wherein a period of time for the annealing treatment is 2 minutes to 30 minutes.