Control method for multi-zone active-matrix temperature control in plasma processing apparatus

A method for providing multi-zone active-matrix temperature control, comprising:

• fabricating a temperature control matrix and a gate driver by fabricating N*M temperature control modules in N-rows and M-columns, power supply lines, and power return lines;
• for each temperature control module providing:
• a heater;
• a gate driving line;
• a semiconductor switch;
• connecting a gate electrode of the semiconductor switch to the gate driver via the gate driving line, one electrode of the semiconductor switch being connected with one of the power supply lines, and another electrode of the semiconductor switch connected to the heater;
• in the temperature control matrix, serially connecting a first end of the heater in each of the temperature control modules in a same row or same column to one of the power return lines that is common to the same row or same column;
• serially connecting the semiconductor switch each of the temperature control modules in a same row or a same column to one of the power supply lines that is common to the same row or same column;
• and,
• connecting all of the power return lines directly to one common power return line to form a single lead-out line of the multi-zone active-matrix temperature control system;
• serially connecting the semiconductor switches in the temperature control modules in the same column are to a common power supply line of M columns of temperature control modules respectively connect to M power supply lines;
• the M power supply lines selectively supply power to the temperature control modules in their respective connected columns;
• connecting all of the power return lines directly to one common power return line forming a single lead-out line of the multi-zone active-matrix temperature control system.

A method of providing multi-zone active-matrix temperature control, comprising:

• fabricating a multi-zone active-matrix temperature control system with a temperature control matrix and a gate driver;
• the temperature control matrix having N*M temperature control modules forming a N-row M-column matrix, power supply lines, and power return lines;
• for each temperature control module providing:
• a heater;
• a gate driving line;
• a semiconductor switch;
• connecting a gate electrode of the semiconductor switch to the gate driver via the gate driving line, connecting one electrode of the semiconductor switch with one of the power supply lines, and connecting another electrode of the semiconductor switch connected to the heater;
• serially connecting a first end of the heater in each of the temperature control modules in a same row or same column to one of the power return lines that is common to the same row or same column, and serially connecting the semiconductor switch of each of the temperature control modules in a same row or a same column to one of the power supply lines that is common to the same row or same column;
• and,
• directly connecting all of the power return lines to one common power return line forming a single lead-out line of the multi-zone active-matrix temperature control system;
• serially connecting the semiconductor switches in the temperature control modules in the same column to a common power supply line of M columns of temperature control modules;
• energizing M power supply lines to supply power to the temperature control modules in their respective connected columns;
• serially connecting the gate electrodes of semiconductor switches of temperature control modules in a same row to a common gate driving line;
• connecting N rows of temperature control modules to N gate driving lines;
• connecting the N gate driving lines with one or more gate drivers, respectively;
• and,
• operating the gate driver to control the N rows of temperature control modules.

A method of temperature control, comprising:

• fabricating a multi-zone active-matrix temperature control system with a temperature control matrix and a gate driver;
• the temperature control matrix having N*M temperature control modules forming a N-row M-column matrix, power supply lines, and power return lines;
• for each temperature control module providing:
• a heater;
• a gate driving line;
• a semiconductor switch provided with a gate electrode connected to the gate driver via the gate driving line, one electrode of the semiconductor switch being connected with one of the power supply lines, and another electrode of the semiconductor switch connected to the heater;
• in the temperature control matrix, each of the temperature control modules in a same row or same column has a first end of its heater serially connected to one of the power return lines that is common to the same row or same column, and each of the temperature control modules in a same row or a same column has its semiconductor switch serially connects to one of the power supply lines that is common to the same row or same column;
• and,
• wherein all of the power return lines are directly connected to one common power return line forming a single lead-out line of the multi-zone active-matrix temperature control system;
• and, wherein, in the temperature control matrix,
• the semiconductor switches of all temperature control modules are connected to one common power supply line;
• the gate electrode of semiconductor switches in each temperature control module is connected to at least one gate driver;
• the gate driver controls each temperature control module, respectively.