Resistors for integrated circuits
AssigneePragmatic Semiconductor Limited
InventorRichard Price
Life of this patent
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Abstract
A thin-film integrated circuit comprising a first semiconductor device, a second semiconductor device, a first resistor, and a second resistor is provided. A semiconducting region of the first semiconductor device, a resistor body of the first resistor, a semiconducting region of the second semiconductor device, and a resistor body of the second resistor are formed from at least one of a first source material and a second source material, and a material of the resistor body of the first resistor and a material of the resistor body of the second resistor have different electrical properties.
Claims20
A thin-film integrated circuit, IC, comprising:
- a first semiconductor device,
- a second semiconductor device,
- a first resistor, and
- a second resistor,
- wherein a semiconducting region of the first semiconductor device, a resistor body of the first resistor, a semiconducting region of the second semiconductor device, and a resistor body of the second resistor are formed from at least one of a first source material and a second source material,
- wherein a material of the resistor body of the first resistor and a material of the resistor body of the second resistor have different electrical properties, and
- wherein the first semiconductor device is a first thin-film transistor, TFT, or a Schottky diode, and the resistor body of the first resistor and the channel of the first TFT or the semiconducting region of the Schottky diode are formed from a single deposition layer of the first source material.
A method for fabricating a thin-film integrated circuit, IC, the thin-film IC comprising a first semiconductor device, a second semiconductor device, a first resistor, and a second resistor, and the method comprising
- depositing at least one of a first source material and a second source material to form a semiconducting region of the first semiconductor device, a resistor body of the first resistor, a semiconducting region of the second semiconductor device, and a resistor body of the second resistor, and
- altering the electrical properties of at least one portion of the source material forming the semiconducting region of the first semiconductor device, the resistor body of the first resistor, the semiconducting region of the second semiconductor device, and the resistor body of the second resistor during or after deposition of the respective portion of source material,
- wherein the disposed material of the resistor body of the first resistor and the disposed material of the resistor body of the second resistor have different electrical properties, and
- wherein the first semiconductor device is a first thin-film transistor, TFT, or a Schottky diode, and the resistor body of the first resistor and the channel of the first TFT or the semiconducting region of the Schottky diode are formed from a single deposition layer of the first source material.
Dependencies are inferred from the claim text.