Oxide-based resistive memory having a plasma-exposed bottom electrode

Abstract

Embodiments of the invention provide a resistive switching device that includes a metal interconnect electrode and a charge-particle-treated memory stack over the metal interconnect electrode. The charge-particle-treated memory stack includes a plurality of layers that includes a top electrode, a bottom electrode, and a dielectric layer between the top electrode and the bottom electrode. The dielectric layer includes a portion of a blanket dielectric layer. The bottom electrode includes a portion of a blanket bottom electrode layer. The charge-particle-treated memory stack further includes a current-conducting filament characteristic that results from charge particle treatments applied while a top surface of the blanket dielectric layer is exposed and a top surface of the blanket bottom electrode is exposed.

Dependencies are inferred from the claim text.