Magnetoresistance effect element and magnetic recording array

A magnetoresistance effect element, comprising:

• a magnetic recording layer which includes a ferromagnetic material;
• a non-magnetic layer which is laminated on the magnetic recording layer;
• and
• a magnetization reference layer which is laminated on the non-magnetic layer,
• wherein the magnetic recording layer has a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer,
• the first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled,
• the magnetic recording layer has
• a central region in which a product of a film thickness and a saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and a saturation magnetization of the second ferromagnetic layer, and
• an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer, and
• the outer region is located outside the central region in a plan view from a laminating direction.