Display substrate having pixel circuit comprising resistance device connected between driving sub-circuit and light-emitting element, and display device

A display substrate, comprising a base substrate and a sub-pixel on the base substrate, wherein the sub-pixel comprises a pixel circuit, and the pixel circuit comprises a data writing sub-circuit, a storage sub-circuit, a driving sub-circuit, and a resistance device,

• the data writing sub-circuit is electrically connected with a first terminal of the storage sub-circuit, and is configured to transmit a data signal to the first terminal of the storage sub-circuit in response to a control signal,
• the driving sub-circuit comprises a control electrode, a first electrode and a second electrode, the control electrode of the driving sub-circuit is electrically connected with the first terminal of the storage sub-circuit, the first electrode of the driving sub-circuit is configured to receive a first power supply voltage, and the second electrode of the driving sub-circuit is electrically connected with a first terminal of the resistance device;
• a second terminal of the resistance device is configured to be electrically connected with a first electrode of a light-emitting element, and the driving sub-circuit is configured to drive the light-emitting element to emit light in response to a voltage at the first terminal of the storage sub-circuit;
• and
• the resistance device and the control electrode of the driving sub-circuit are in a same layer and insulated from each other, and a resistivity of the resistance device is higher than a resistivity of the control electrode of the driving sub-circuit;
• the control signal comprises a first control signal, the data writing sub-circuit comprises a first data writing transistor, the driving sub-circuit comprises a driving transistor, the first data writing transistor is a P-type metal-oxide semiconductor field effect transistor, and the driving transistor is an N-type metal-oxide semiconductor field effect transistor;
• a gate electrode of the first data writing transistor is configured to receive the first control signal, a first electrode of the first data writing transistor is configured to receive the data signal, a second electrode of the first data writing transistor is electrically connected with the first terminal of the storage sub-circuit and the control electrode of the driving sub-circuit;
• and
• a gate electrode, a first electrode and a second electrode of the driving transistor respectively serve as the control electrode, the first electrode and the second electrode of the driving sub-circuit;
• the control signal further comprises a second control signal, the data writing sub-circuit further comprises a second data writing transistor, and the second data writing transistor is an N-type metal-oxide semiconductor field effect transistor, and
• a gate electrode of the second data writing transistor is configured to receive a second control signal, a first electrode of the second data writing transistor is electrically connected with the first electrode of the first data writing transistor, and a second electrode of the second data writing transistor is electrically connected with the second electrode of the first data writing transistor.