System-on-chip with ferroelectric random access memory and tunable capacitor

A method of forming a semiconductor device, the method comprising:

• forming a first dielectric layer over a substrate, the first dielectric layer extending from a first device region of the semiconductor device to a second device region of the semiconductor device;
• forming a memory cell of a memory device over the substrate in the first device region, wherein forming the memory cell comprises forming a first ferroelectric structure in the first dielectric layer, wherein forming the first ferroelectric structure comprises forming a first bottom electrode, a first ferroelectric layer, and a first top electrode successively over the substrate;
• forming a tunable capacitor of a radio frequency (RF) circuit over the substrate in the second device region, wherein forming the tunable capacitor comprises forming a second ferroelectric structure in the first dielectric layer, wherein forming the second ferroelectric structure comprises forming a second bottom electrode, a second ferroelectric layer, and a second top electrode successively over the substrate;
• forming a fixed capacitor over the substrate in the second device region, wherein forming the fixed capacitor comprises forming a third ferroelectric structure in the first dielectric layer, wherein forming the third ferroelectric structure comprises forming a third bottom electrode, a third ferroelectric layer, and a third top electrode successively over the substrate;
• and
• connecting the fixed capacitor and the tunable capacitor in parallel.

A method of forming a semiconductor device, the method comprising:

• forming a first dielectric layer over a substrate, the first dielectric layer extending from a first device region of the semiconductor device to a second device region of the semiconductor device;
• forming a memory cell of a memory device over the substrate in the first device region, wherein forming the memory cell comprises forming a first ferroelectric structure in the first dielectric layer, wherein forming the first ferroelectric structure comprises forming a first bottom electrode, a first ferroelectric layer, and a first top electrode successively over the substrate;
• and
• forming a tunable capacitor of a radio frequency (RF) circuit over the substrate in the second device region, wherein forming the tunable capacitor comprises forming a second ferroelectric structure in the first dielectric layer, wherein forming the second ferroelectric structure comprises forming a second bottom electrode, a second ferroelectric layer, and a second top electrode successively over the substrate, wherein the second bottom electrode is formed to be wider than the second top electrode such that a first sidewall of the second bottom electrode is aligned along a same line with a first sidewall of the second top electrode, and a second opposing sidewall of the second bottom electrode extends beyond lateral extents of the second top electrode.