Memory array contact structures

A method comprising:

• forming a first ferroelectric layer over a first sidewall of a first word line and a second ferroelectric layer on a second sidewall of a second word line;
• forming a first oxide semiconductor (OS) layer over the first ferroelectric layer and a second OS layer over the second ferroelectric layer;
• forming a first dielectric material extending between the first OS layer and the second OS layer;
• removing a first portion of the first dielectric material, a first portion of the first OS layer adjacent the first portion of the first dielectric material, and a second portion of the second OS layer adjacent the first portion of the first dielectric material to form a first recess;
• depositing a refill layer in the first recess;
• depositing a conductive material on the refill layer;
• removing a first portion of the conductive material, a first portion of the refill layer between the first portion of the conductive material and the first ferroelectric layer, and a second portion of the refill layer between the first portion of the conductive material and the second ferroelectric layer to form a second recess;
• and
• filling the second recess with a second dielectric material.

A method comprising:

• patterning a first trench extending through a first conductive line;
• depositing a memory film along sidewalls and a bottom surface of the first trench;
• depositing an oxide semiconductor (OS) layer over the memory film, wherein the OS layer extends along the sidewalls and the bottom surface of the first trench;
• depositing a first dielectric material on the OS layer, wherein the first dielectric material fills the remaining portion of the first trench;
• patterning a second trench in the first dielectric material and the OS layer, wherein patterning the second trench exposes a sidewall surface of the memory film and a sidewall surface of the OS layer;
• depositing a refill layer along sidewalls and a bottom surface of the second trench, wherein the refill layer physically contacts the sidewall surface of the OS layer;
• depositing a conductive material on the refill layer, wherein the conductive material fills the remaining portion of the second trench;
• patterning a third trench in the conductive material and the refill layer, wherein patterning the third trench exposes the sidewall surface of the memory film and a sidewall surface of the refill layer;
• and
• depositing a second dielectric material in the third trench, wherein the second dielectric material fills the third trench.