Non-volatile memory device including selection gate and manufacturing method thereof
AssigneeSK keyfoundry Inc.
InventorsJin Shik Choi, Su Jin Kim, Won Kyu Lim
Life of this patent
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Abstract
A non-volatile memory device, includes a source region and a drain region disposed in a channel length direction on a substrate; a flash cell, including a floating gate and a control gate, disposed between the source region and the drain region; a selection gate disposed between the source region and the flash cell; a selection line connecting the selection gate; a word line connecting the control gate; a common source line connected to the source region; and a bit line connected to the drain region.
Claims20
A non-volatile memory device, comprising:
- a source region and a drain region disposed in a channel length direction on a substrate;
- a flash cell, comprising a floating gate and a control gate, disposed between the source region and the drain region;
- a selection gate disposed between the source region and the flash cell;
- a selection line connecting the selection gate;
- a word line connecting the control gate;
- a common source line connected to the source region;
- a bit line connected to the drain region;
- a control gate pick up structure, connected to the control gate, comprising a plurality of floating gate poly-silicon patterns;
- and
- a control gate contact plug disposed between the plurality of floating gate poly-silicon patterns.
A non-volatile memory device, comprising:
- a source region and a drain region disposed in a channel length direction on a substrate;
- a flash cell, comprising a floating gate and a control gate, disposed between the source region and the drain region;
- a selection gate disposed between the source region and the flash cell;
- an extended selection gate extending from the selection gate;
- and
- a control gate pick up structure, connected to the control gate, comprising floating gate poly-silicon patterns;
- and
- a control gate contact plug disposed between the floating gate poly-silicon patterns.
A non-volatile memory device, comprising:
- trenches disposed in a substrate;
- a first source region and a first drain region disposed between a first trench of the trenches and a second trench of the trenches;
- a second source region and a second drain region disposed between the second trench and a third trench of the trenches;
- a flash cell comprising a floating gate, and a first control gate and a second control gate disposed on opposing sides of the floating gate, respectively, wherein the flash cell is disposed between the first source region and the first drain region;
- a selection gate disposed between the source region and the flash cell;
- and
- a logic gate disposed between the second source region and the second drain region,
- wherein a length of the selection gate is longer than a length of the floating gate, and
- wherein the length of the floating gate is shorter than a length of the control gate.
Dependencies are inferred from the claim text.