Three-dimensional memory device with doped semiconductor bridge structures and methods for forming the same

A three-dimensional memory device, comprising:

• a pair of alternating stacks of insulating layers and electrically conductive layers laterally spaced apart from each other by a backside trench, wherein each of the pair of alternating stacks and the backside trench laterally extend along a first horizontal direction;
• arrays of memory openings vertically extending through a respective alternating stack among the pair of alternating stacks;
• arrays of memory openings fill structures located in the arrays of memory openings, wherein each of the memory opening fill structures comprises a respective vertical stack of memory elements;
• and
• a backside trench fill structure located within the backside trench and comprising a plurality of bridge structures;
• wherein each of the plurality of bridge structures includes a doped semiconductor material;
• and
• wherein each of the plurality of bridge structures is embedded within a respective dielectric semiconductor oxide liner which comprises a dielectric oxide of the doped semiconductor material.