Semiconductor structure and method for forming semiconductor structure

A method for forming a semiconductor structure, comprising:

• forming a substrate and a stack layer arranged on the substrate, wherein the stack layer comprises a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked on one another in a direction perpendicular to a top surface of the substrate, each of the plurality of first semiconductor layers comprises a plurality of channel areas spaced apart from each other in a first direction, and a plurality of first doped areas and a plurality of second doped areas, each of the plurality of first doped areas being arranged on one side of a respective one of the plurality of channel areas in a second direction, and each of the plurality of second doped areas being arranged on another side of the respective one of the plurality of channel areas in the second direction, and wherein each of the first direction and the second direction is a direction parallel to the top surface of the substrate, and the first direction intersects with the second direction;
• forming a plurality of first openings respectively exposing the plurality of channel areas;
• and
• directly forming a word line structure in each of the plurality of first openings, wherein the word line structure comprises a plurality of word lines extending in the first direction, and each of the plurality of word lines continuously covers the plurality of channel areas spaced apart from each other;
• wherein the directly forming the word line structure in each of the plurality of first openings comprises:
• depositing a conductive material in the plurality of first openings through an atomic layer deposition process to directly form the word line structure comprising the plurality of word lines spaced apart from each other in the direction perpendicular to the top surface of the substrate, each of the plurality of word lines continuously covering the plurality of channel areas spaced apart from each other in the first direction,
• wherein an edge of each of the plurality of word lines is flush with an edge of each of the plurality of channel areas in the second direction;
• and
• wherein a thickness of each of the plurality of second semiconductor layers is greater than a distance between any two adjacent first openings of the plurality of first openings spaced apart from each other in the first direction.