Semiconductor device, manufacturing method of semiconductor device, and storage device

Abstract

A semiconductor device includes a substrate, first word lines and second word lines; one or more first word line trenches and one or more second word line trenches are alternately arranged on the substrate in parallel; each first word line is arranged in a respective first word line trench; each second word line is arranged in a respective second word line trench, where width of the first word line trench is greater than width of the second word line trench, and depth of the first word line trench is less than depth of the second word line trench, so that width of the first word line is greater than width of the second word line, height of the first word line is less than height of the second word line, and threshold voltage of the first word line is greater than threshold voltage of the second word line.

Dependencies are inferred from the claim text.