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US 12,225,710 B2Granted
Memory device with cross shape active layer surrounded by word line
AssigneeSK hynix Inc.
InventorsIl Do Kim, Dong Sun Sheen, Seung Hwan Kim
Life of this patent
Estimating the term…
Abstract
A memory device includes a substrate, an active layer spaced apart from a surface of the substrate and laterally oriented in a first direction and including an opened first side, a closed second side, and a channel layer between the first side and the second side, and a word line laterally oriented in a second direction crossing the first direction while surrounding the channel layer.
Claims10
A memory device, comprising:
- a substrate;
- a cross shape active layer spaced apart from a surface of the substrate and laterally oriented in a first direction, and including a first side, a second side, and a channel layer between the first side and the second side;
- and
- a word line laterally oriented in a second direction crossing the first direction while surrounding the channel layer.
1 more element
Dependencies are inferred from the claim text.