Solid-state imaging device and imaging device with combined dynamic vision sensor and imaging functions

An electronic apparatus, comprising:

• an imaging lens;
• and
• a solid-state imaging device, including:
• at least one pixel array unit, wherein the pixel array unit includes:
• a plurality of event detection pixels, the plurality of event detection pixels including:
• a first photoelectric conversion region disposed in a substrate;
• and
• a first amplifier transistor;
• a plurality of image sensing pixels, the plurality of image sensing pixels including:
• a second photoelectric conversion region disposed in the substrate;
• a third photoelectric conversion region disposed in the substrate;
• and
• a second amplifier transistor coupled to the second and third photoelectric conversion regions;
• a first isolation region disposed in the substrate between the first photoelectric conversion region and the second photoelectric conversion region;
• and
• a second isolation region disposed in the substrate between the second photoelectric conversion region and the third photoelectric conversion region wherein, in a cross sectional view, the first isolation region and the second isolation region extend to different depths within the substrate;
• and
• a control unit, wherein the control unit controls operation of the solid-state imaging device.

A method, comprising:

• providing a pixel array unit, wherein the pixel array unit includes:
• a plurality of event detection pixels, the plurality of event detection pixel including:
• a first photoelectric conversion region disposed in a substrate;
• and
• a first amplifier transistor;
• a plurality of image sensing pixels, the plurality of image sensing pixels including:
• a second photoelectric conversion region disposed in the substrate;
• a third photoelectric conversion region disposed in the substrate;
• and
• a second amplifier transistor coupled to the second and third photoelectric conversion regions;
• a first isolation region disposed in the substrate between the first photoelectric conversion region and the second photoelectric conversion region;
• and
• a second isolation region disposed in the substrate between the second photoelectric conversion region and the third photoelectric conversion region, wherein, in a cross sectional view, the first isolation region and the second isolation region extend to different depths within the substrate.