Control circuit with bias circuitry for a semiconductor memory
AssigneeChangxin Memory Technologies, Inc.
InventorYupeng Fan
Life of this patent
Estimating the term…
Abstract
A control circuit includes a bias circuit. The bias circuit is configured to provide a bias current for a functional circuit. The bias circuit includes a first bias circuit and a second bias circuit. The first bias circuit is configured to provide a first bias current, and the second bias circuit is configured to provide a second bias current. Herein, the first bias current is smaller than the second bias current, the first bias circuit is configured to be in a normally open state after being powered on, and the second bias circuit is configured to receive a bias enabling signal and provide the second bias current based on the bias enabling signal.
Claims17
A control circuit, comprising a bias circuit, the bias circuit being configured to provide a bias current for a functional circuit,
- the bias circuit comprising a first bias circuit and a second bias circuit, the first bias circuit being configured to provide a first bias current, and the second bias circuit being configured to provide a second bias current, wherein the first bias current is smaller than the second bias current, the first bias circuit is configured to be in a normally open state after being powered on, and the second bias circuit is configured to receive a bias enabling signal and provide the second bias current based on the bias enabling signal;
- wherein the functional circuit is configured to receive an excitation signal and to be started based on the excitation signal, wherein a time point when the functional circuit receives the excitation signal is later than a time point when the bias circuit receives the bias enabling signal;
- and
- wherein the control circuit further comprising an enabling circuit, wherein the enabling circuit is configured to receive a power switching signal and output the bias enabling signal and the excitation signal based on the power switching signal, wherein the power switching signal characterizes starting the functional circuit.
A control circuit, comprising a bias circuit, the bias circuit being configured to provide a bias current for a functional circuit,
- the bias circuit comprising a first bias circuit and a second bias circuit, the first bias circuit being configured to provide a first bias current, and the second bias circuit being configured to provide a second bias current, wherein the first bias current is smaller than the second bias current, the first bias circuit is configured to be in a normally open state after being powered on, and the second bias circuit is configured to receive a bias enabling signal and provide the second bias current based on the bias enabling signal;
- wherein the functional circuit comprises an input buffer circuit.
A semiconductor memory, comprising a control circuit, the control circuit comprising a bias circuit, the bias circuit being configured to provide a bias current for a functional circuit,
- the bias circuit comprising a first bias circuit and a second bias circuit, the first bias circuit being configured to provide a first bias current, and the second bias circuit being configured to provide a second bias current, wherein the first bias current is smaller than the second bias current, the first bias circuit is configured to be in a normally open state after being powered on, and the second bias circuit is configured to receive a bias enabling signal and provide the second bias current based on the bias enabling signal;
- wherein the functional circuit is configured to receive an excitation signal and to be started based on the excitation signal, wherein a time point when the functional circuit receives the excitation signal is later than a time point when the bias circuit receives the bias enabling signal.
Dependencies are inferred from the claim text.