Loading patent…
AssigneeQorvo US, Inc.
InventorsJoel Lawrence Dawson, Gangadhar Burra, Frederick L. Martin, Mark Briffa, Rached Hajjii, Amin Shahverdi, Elias Reese, Nikolaus Klemmer, Jeffrey Gengler
Estimating the term…
A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based on detected process variations, a microcontroller may raise a drain voltage to increase output power capability. Power capability of the power amplifier scales as the square of the drain voltage, so small adjustments are sufficient to offset the slow process corner while maintaining reliability.
A module comprising:
A power amplifier module comprising:
A method for using a power amplifier, comprising:
Dependencies are inferred from the claim text.