Method for producing optoelectronic semiconductor chips, and optoelectronic semiconductor chip

A method for producing optoelectronic semiconductor chips, the method comprising:

• A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence comprises an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers;
• B) generating a structured masking layer;
• C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region;
• and
• D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from
• [(AlxGa1-x)yIn1-y]zP1-z with x≥0.5, wherein the quantum well layers are grown in A) from [(AlaGa1-a)bIn1-b]cP1-c with o<a≤0.2,
• wherein the method is performed in the cited order, and
• wherein the at least one intermixing region is formed to comprise an indirect band gap such that radiating and non-radiating recombinations in the at least one intermixing region are reduced.