Light-emitting diode chip

A light-emitting diode chip, comprising:

• a multiple quantum well structure formed between an N-type semiconductor layer and an P-type semiconductor layer, an emission spectrum of the light-emitting diode chip comprises a first peak having a wavelength in a range of 430 to 470 nm and a second peak having a wavelength in a range of 510 to 550 nm, and an intensity of the second peak is 20% to 60% of an intensity of the first peak;
• wherein the multiple quantum well structure comprises:
• a plurality of first quantum wells and at least one second quantum well different in indium concentrations, and the plurality of first quantum wells comprise:
• first quantum wells located between the at least one second quantum well and the P-type semiconductor layer and first quantum wells located between the at least one second quantum well and the N-type semiconductor layer;
• wherein a total layer number of the at least one second quantum well is 1/15 to ⅕ of a total layer number of the first quantum wells located between the at least one second quantum well and the P-type semiconductor layer;
• and
• wherein the total layer number of the first quantum wells located between the at least one second quantum well and the P-type semiconductor layer is greater than a total layer number of the first quantum wells located between the at least one second quantum well and the N-type semiconductor layer.