Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• a semiconductor substrate;
• a conductive element, disposed on the semiconductor substrate, wherein the conductive element comprises a semiconductor portion and a conductive portion joined to the semiconductor portion;
• a channel layer, laying onto the conductive element and extending outward from an edge of conductive element and over the semiconductor substrate;
• and
• a gate, disposed over the semiconductor substrate and overlapping with the channel layer, wherein the gate is vertically disposed between the semiconductor substrate and the conductive element.

A semiconductor device, comprising:

• a semiconductor substrate;
• a conductive element, disposed on the semiconductor substrate, wherein the conductive element comprises a semiconductor portion and a conductive portion joined to the semiconductor portion;
• a channel layer, laying onto the conductive element, wherein in a cross-section along a vertical direction, the channel layer extends beyond opposite edges of conductive element and over the semiconductor substrate;
• and
• a gate, disposed over the semiconductor substrate and overlapping with the channel layer, wherein the channel layer is disposed between the semiconductor substrate and the gate.