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US 12,224,346 B2Granted
Domain switching devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJinseong Heo, Sangwook Kim, Yunseong Lee, Sanghyun Jo
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Abstract
A domain switching device includes a channel region, a source region and a drain region connected to the channel region, a gate electrode isolated from contact with the channel region, an anti-ferroelectric layer between the channel region and the gate electrode, a conductive layer between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer between the anti-ferroelectric layer and the channel region.
Claims13
A semiconductor device, comprising:
- a channel region;
- a source and a drain connected to the channel region;
- a gate electrode isolated from contact with the channel region;
- an anti-ferroelectric layer between the channel region and the gate electrode;
- a conductive layer between the gate electrode and the anti-ferroelectric layer, the conductive layer in contact with the anti-ferroelectric layer;
- and
- a barrier layer between the anti-ferroelectric layer and the channel region,
- wherein the anti-ferroelectric layer comprises zirconium oxide at a ratio of over 50% in adjacent region to the conductive layer and the anti-ferroelectric layer has non-hysteresis behavior characteristics.
5 more elements
Dependencies are inferred from the claim text.