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US 12,224,339 B2Granted
High electron mobility transistor
AssigneeUnited Microelectronics Corp.
InventorsYu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Abstract
An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.
Claims7
A high electron mobility transistor (HEMT), comprising:
- an aluminum gallium nitride layer;
- a gallium nitride layer disposed below the aluminum gallium nitride layer;
- a magnesium oxide layer disposed under the gallium nitride layer;
- a source electrode and a drain electrode disposed on the aluminum gallium nitride layer;
- a gate electrode disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode;
- and
- a substrate, a nucleation layer, a transition layer and a superlattice disposed below the magnesium oxide layer, wherein the substrate, the nucleation layer, the transition layer and the superlattice are disposed from bottom to top.
4 more elements
Dependencies are inferred from the claim text.