HEMT and fabricating method of the same

A fabricating method of a high electron mobility transistor (HEMT), comprising:

• forming a gallium nitride layer, an aluminum gallium nitride layer, a P-type gallium nitride layer, and a schottky contact layer in sequence, wherein the schottky contact layer contacts P-type gallium nitride layer;
• performing an etching process to etch the schottky contact layer and the P-type gallium nitride layer to form a gate by taking the aluminum gallium nitride layer as a first etching stop layer, wherein the P-type gallium nitride layer contacts the schottky contact layer, and a top surface of the P-type gallium nitride layer entirely overlaps a bottom surface of the schottky contact layer;
• forming a protectively layer covering the gate and the aluminum gallium nitride layer;
• etching the protective layer to form two first contact holes in the protective layer at two sides of the gate;
• forming a source electrode and a drain electrode respectively in the two first contact holes;
• after forming the source electrode and the drain electrode, etching the protective layer to form a second contact hole in the protective layer directly on the gate;
• and
• forming a gate electrode in the second contact hole and contacting the schottky contact layer.