HEMT with stair-like compound layer at drain
AssigneeUnited Microelectronics Corp.
InventorPo-Yu Yang
Life of this patent
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Abstract
An HEMT with a stair-like compound layer as a drain includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode, a gate electrode and a drain electrode are disposed on the second III-V compound layer. The gate electrode is disposed between the source electrode and the drain electrode. A first P-type III-V compound layer is disposed between the drain electrode and the second III-V compound layer. The first P-type III-V compound layer is stair-like.
Claims13
A high electron mobility transistor (HEMT) with a stair-like compound layer as a drain, comprising:
- a first III-V compound layer;
- a second III-V compound layer disposed on the first III-V compound layer, wherein composition of the first III-V compound layer and composition of the second III-V compound layer are different from each other;
- a source electrode, a gate electrode and a drain electrode disposed on the second III-V compound layer, wherein the gate electrode is disposed between the source electrode and the drain electrode;
- and a first P-type III-V compound layer disposed between the drain electrode and the second III-V compound layer, wherein the first P-type III-V compound layer has a stair-like shape;
- wherein steps constituting the stair-like shape go down toward a direction away from the gate electrode.
A high electron mobility transistor (HEMT) with a stair-like compound layer as a drain, comprising:
- a first III-V compound layer;
- a second III-V compound layer disposed on the first III-V compound layer, wherein composition of the first III-V compound layer and composition of the second III-V compound layer are different from each other;
- a source electrode, a gate electrode and a drain electrode disposed on the second III-V compound layer, wherein the gate electrode is disposed between the source electrode and the drain electrode, the drain electrode comprises a first part and a second part, material of the first part is different from material of the second part;
- and
- a first P-type III-V compound layer disposed between the drain electrode and the second III-V compound layer, wherein the first P-type III-V compound layer has a stair-like shape, and Schottky contact is between the first part and the first P-type III-V compound layer.
Dependencies are inferred from the claim text.