Semiconductor device

A semiconductor device having a TFT, in which a gate insulating film is formed on a gate electrode, and an oxide semiconductor film is formed on the gate insulating film;

• the oxide semiconductor film including a channel region, a drain region, and a source region,
• wherein a metal oxide film is formed on a top surface of the gate electrode in an opposing portion to the channel region in a plan view,
• the metal oxide film is not formed at a part of the top surface of the gate electrode,
• the oxide semiconductor film comprises an intermediate resistance region between the channel region and the drain region and between the channel region and the source region of the oxide semiconductor film,
• the metal oxide film is not formed at places of the top surface of the gate electrode corresponding to the intermediate resistance region, and
• the metal oxide is formed at places of the top surface of the gate electrode corresponding to the drain region and the source region of the oxide semiconductor film.

A semiconductor device having a TFT, in which a gate insulating film is formed on a gate electrode, and an oxide semiconductor film is formed on the gate insulating film;

• the oxide semiconductor film including a channel region, a drain region, and a source region,
• wherein an insulating metal oxide film is formed on a top surface of the gate electrode in an opposing portion to the channel region in a plan view,
• the metal oxide film is not formed at a part of the top surface of the gate electrode,
• the oxide semiconductor film comprises an intermediate resistance region between the channel region and the drain region and between the channel region and the source region of the oxide semiconductor film,
• the insulating metal oxide film is not formed at places of the top surface of the gate electrode corresponding to the intermediate resistance region, and
• the insulating metal oxide film is formed at places of the top surface of the gate electrode corresponding to the drain region and the source region of the oxide semiconductor film.