Trench transistor

A trench transistor, comprising:

• a semiconductor region;
• a first trench structure and a second trench structure in the semiconductor region;
• a trench connecting structure in the semiconductor region, which connects an edge area of the first trench structure and an edge area of the second trench structure to one another;
• a third trench structure in the semiconductor region, which is connected to the trench connecting structure;
• a gate insulation layer in the trench structures and the trench connecting structure;
• an electrically conductive gate layer in the first, second, and third trench structures and the trench connecting structure;
• and
• a gate contact, which is electrically conductively connected to the electrically conductive gate layer in the third trench structure, at least at an edge area of the third trench structure, a width of the third trench structure being greater than a width of the first trench structure and/or a width of the second trench structure,
• wherein the third trench structure includes a first area and a second area, a width of the first area increasing toward the second area up to a width of the second area.

A trench transistor, comprising:

• a semiconductor region;
• a plurality of trench structures situated adjacent to one another in the semiconductor region;
• a trough in the semiconductor region connected in an edge area of the trench transistor to the plurality of trench structures;
• a gate insulation layer and an electrically conductive gate layer formed on the gate insulation layer in the trench structures and in the trough;
• and
• a gate contact, which is electrically conductively connected to the electrically conductive gate layer in the trough, the trough extending at least from a first outermost trench structure of the plurality of trench structures laterally up to a second outermost trench structure of the plurality of trench structures, which is farthest away from the first outermost trench structure,
• wherein the width of the trench structure increases continuously from the active area of the trench transistor to the edge area of the trench transistor.

A trench transistor, comprising:

• a semiconductor region;
• a trench structure formed in the semiconductor region;
• a gate insulation layer and an electrically conductive gate layer formed on the gate insulation layer in the trench structure;
• and
• a gate contact, which is electrically conductively connected to the electrically conductive gate layer in an edge area of the trench transistor, a width of the trench structure being greater in the edge area of the trench transistor than in an active area of the trench transistor,
• wherein the width of the trench structure increases continuously from the active area of the trench transistor to the edge area of the trench transistor.