Semiconductor device having word line structure
AssigneeNanya Technology Corporation
InventorsCheng-Yan Ji, Wei-Tong Chen
Life of this patent
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Abstract
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a word line structure. The semiconductor substrate has an active region. The word line structure is disposed in the active region of the semiconductor substrate. The word line structure includes a first work function layer, a second work function layer, and a buffer structure. The second work function layer is on the first work function layer. The buffer structure is between the first work function layer and the second work function layer.
Claims17
A semiconductor device, comprising:
- a semiconductor substrate having an active region;
- and
- a word line structure disposed in the active region of the semiconductor substrate, the word line structure comprising:
- a first work function layer;
- a second work function layer on the first work function layer;
- a buffer structure having a bottom buffer layer between the first work function layer and the second work function layer;
- and
- a barrier layer having a top portion between the bottom buffer layer of the buffer structure and the first work function layer;
- wherein the word line structure further comprises:
- a dielectric layer surrounding the buffer structure, the barrier layer, the first work function layer and the second work function layer, wherein the buffer structure and the dielectric layer comprise a same material.
A semiconductor device, comprising:
- a semiconductor substrate having a trench;
- a word line structure disposed in the trench of the semiconductor substrate, the word line structure comprising:
- a doped-polysilicon layer;
- a buffer structure having a bottom buffer layer directly contacting a bottom surface of the doped-polysilicon layer;
- a barrier layer having a top portion directly contacting with the bottom buffer layer of the buffer structure;
- and
- a dielectric structure in the trench and over the doped-polysilicon layer;
- wherein the buffer structure further comprises a top portion directly contacting a top surface of the doped-polysilicon layer.
Dependencies are inferred from the claim text.