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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Ju Chen, Shih-Hsiang Chiu, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
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Methods for improving sealing between contact plugs and adjacent dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first dielectric layer over a conductive feature, a first portion of the first dielectric layer including a first dopant; a metal feature electrically coupled to the conductive feature, the metal feature including a first contact material in contact with the conductive feature; a second contact material over the first contact material, the second contact material including a material different from the first contact material, a first portion of the second contact material further including the first dopant; and a dielectric liner between the first dielectric layer and the metal feature, a first portion of the dielectric liner including the first dopant.
A semiconductor device, comprising:
A semiconductor device comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.