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US 12,224,323 B2Granted
Fabrication method of buried wordline structure
AssigneeChangxin Memory Technologies, Inc.
InventorsYong Lu, Hongkun Shen
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Abstract
A buried wordline structure fabrication method includes: providing a first trench in a semiconductor substrate, wherein the first trench has a tip on its bottom; performing epitaxial growth within the first trench to reduce the depth of the tip on the bottom of the first trench; and forming a gate dielectric layer on an inner wall of the first trench and filling a gate conductive layer within the first trench to form the buried wordline structure.
Claims15
A fabrication method for a buried wordline structure, comprising:
- providing a first trench in a semiconductor substrate, wherein the first trench has a tip on its bottom;
- performing epitaxial growth on the semiconductor substrate within the first trench to reduce the depth of the tip on the bottom of the first trench;
- and
- forming a gate dielectric layer on an inner wall of the first trench and filling a gate conductive layer within the first trench to form the buried wordline structure.
1 more element
A buried wordline structure, comprising:
- a semiconductor substrate;
- a trench isolation structure, formed in the semiconductor substrate, wherein a surface layer of the semiconductor substrate is divided into a plurality of independent regions by the trench isolation structure;
- a first trench, provided in the semiconductor substrate, wherein the first trench with an epitaxial layer formed on an inner wall thereof has a planar bottom;
- a second trench, provided in the trench isolation structure, wherein the second trench has a tip on its bottom, the first trench and the second trench are connected with each other to form a connection trench, and the depth of the second trench is greater than that of the first trench;
- a gate dielectric layer, formed on an inner wall of the first trench;
- and
- a gate conductive layer, filled within the first trench and the second trench.
4 more elements
Dependencies are inferred from the claim text.